Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
500 V
Package Type
Super-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
540 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.1mm
Width
5.3mm
Transistor Material
Si
Typical Gate Charge @ Vgs
350 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.8mm
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
6.512 OMR
6.512 OMR Each (ex VAT)
6.838 OMR
6.838 OMR Each (inc. VAT)
Standard
1
6.512 OMR
6.512 OMR Each (ex VAT)
6.838 OMR
6.838 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 4 | 6.512 OMR |
| 5 - 9 | 5.428 OMR |
| 10 - 24 | 5.098 OMR |
| 25 - 49 | 4.686 OMR |
| 50+ | 4.328 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
500 V
Package Type
Super-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
540 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.1mm
Width
5.3mm
Transistor Material
Si
Typical Gate Charge @ Vgs
350 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.8mm
Product details



