Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
3.520 OMR
0.352 OMR Each (In a Pack of 10) (ex VAT)
3.696 OMR
0.370 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
3.520 OMR
0.352 OMR Each (In a Pack of 10) (ex VAT)
3.696 OMR
0.370 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 240 | 0.352 OMR | 3.520 OMR |
| 250 - 490 | 0.270 OMR | 2.695 OMR |
| 500 - 990 | 0.198 OMR | 1.980 OMR |
| 1000 - 1990 | 0.160 OMR | 1.595 OMR |
| 2000+ | 0.143 OMR | 1.430 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


