Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

RS Stock No.: 708-4831Brand: VishayManufacturers Part No.: IRFU110PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

6.22mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

3.465 OMR

0.346 OMR Each (In a Pack of 10) (ex VAT)

3.638 OMR

0.363 OMR Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF
Select packaging type

3.465 OMR

0.346 OMR Each (In a Pack of 10) (ex VAT)

3.638 OMR

0.363 OMR Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 900.346 OMR3.465 OMR
100 - 2400.308 OMR3.080 OMR
250 - 4900.286 OMR2.860 OMR
500 - 9900.270 OMR2.695 OMR
1000+0.231 OMR2.310 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

6.22mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more