Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
3.465 OMR
0.346 OMR Each (In a Pack of 10) (ex VAT)
3.638 OMR
0.363 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
3.465 OMR
0.346 OMR Each (In a Pack of 10) (ex VAT)
3.638 OMR
0.363 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.346 OMR | 3.465 OMR |
| 100 - 240 | 0.308 OMR | 3.080 OMR |
| 250 - 490 | 0.286 OMR | 2.860 OMR |
| 500 - 990 | 0.270 OMR | 2.695 OMR |
| 1000+ | 0.231 OMR | 2.310 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details


