Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
0.566 OMR
0.566 OMR Each (ex VAT)
0.594 OMR
0.594 OMR Each (inc. VAT)
Standard
1
0.566 OMR
0.566 OMR Each (ex VAT)
0.594 OMR
0.594 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price |
---|---|
1 - 9 | 0.566 OMR |
10 - 49 | 0.407 OMR |
50 - 99 | 0.380 OMR |
100 - 249 | 0.346 OMR |
250+ | 0.302 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details