Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.445 OMR
1.089 OMR Each (In a Pack of 5) (ex VAT)
5.717 OMR
1.143 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
5.445 OMR
1.089 OMR Each (In a Pack of 5) (ex VAT)
5.717 OMR
1.143 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 1.089 OMR | 5.445 OMR |
| 50 - 120 | 1.028 OMR | 5.142 OMR |
| 125 - 245 | 0.930 OMR | 4.648 OMR |
| 250 - 495 | 0.874 OMR | 4.372 OMR |
| 500+ | 0.830 OMR | 4.152 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details


