Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
3.080 OMR
0.308 OMR Each (In a Pack of 10) (ex VAT)
3.234 OMR
0.323 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
3.080 OMR
0.308 OMR Each (In a Pack of 10) (ex VAT)
3.234 OMR
0.323 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.308 OMR | 3.080 OMR |
| 100 - 240 | 0.292 OMR | 2.915 OMR |
| 250 - 490 | 0.242 OMR | 2.420 OMR |
| 500 - 990 | 0.231 OMR | 2.310 OMR |
| 1000+ | 0.214 OMR | 2.145 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details


