Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
3.932 OMR
0.786 OMR Each (In a Pack of 5) (ex VAT)
4.129 OMR
0.825 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
3.932 OMR
0.786 OMR Each (In a Pack of 5) (ex VAT)
4.129 OMR
0.825 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 0.786 OMR | 3.932 OMR |
| 50 - 120 | 0.627 OMR | 3.135 OMR |
| 125 - 245 | 0.588 OMR | 2.942 OMR |
| 250 - 495 | 0.512 OMR | 2.558 OMR |
| 500+ | 0.484 OMR | 2.420 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details


