Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
6.325 OMR
0.126 OMR Each (In a Pack of 50) (ex VAT)
6.641 OMR
0.132 OMR Each (In a Pack of 50) (inc. VAT)
Standard
50
6.325 OMR
0.126 OMR Each (In a Pack of 50) (ex VAT)
6.641 OMR
0.132 OMR Each (In a Pack of 50) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
50 - 450 | 0.126 OMR | 6.325 OMR |
500 - 1200 | 0.088 OMR | 4.400 OMR |
1250 - 2450 | 0.066 OMR | 3.300 OMR |
2500 - 4950 | 0.060 OMR | 3.025 OMR |
5000+ | 0.060 OMR | 3.025 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details