Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.09 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
4.620 OMR
0.231 OMR Each (In a Pack of 20) (ex VAT)
4.851 OMR
0.243 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
4.620 OMR
0.231 OMR Each (In a Pack of 20) (ex VAT)
4.851 OMR
0.243 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | 0.231 OMR | 4.620 OMR |
200 - 480 | 0.170 OMR | 3.410 OMR |
500 - 980 | 0.160 OMR | 3.190 OMR |
1000 - 1980 | 0.138 OMR | 2.750 OMR |
2000+ | 0.116 OMR | 2.310 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.09 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details