Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
4.015 OMR
0.402 OMR Each (In a Pack of 10) (ex VAT)
4.216 OMR
0.422 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
4.015 OMR
0.402 OMR Each (In a Pack of 10) (ex VAT)
4.216 OMR
0.422 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.402 OMR | 4.015 OMR |
| 100 - 240 | 0.308 OMR | 3.080 OMR |
| 250 - 490 | 0.280 OMR | 2.805 OMR |
| 500 - 990 | 0.242 OMR | 2.420 OMR |
| 1000+ | 0.214 OMR | 2.145 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


