Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
2.035 OMR
0.204 OMR Each (In a Pack of 10) (ex VAT)
2.137 OMR
0.214 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
2.035 OMR
0.204 OMR Each (In a Pack of 10) (ex VAT)
2.137 OMR
0.214 OMR Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.204 OMR | 2.035 OMR |
| 100 - 490 | 0.192 OMR | 1.925 OMR |
| 500 - 990 | 0.176 OMR | 1.760 OMR |
| 1000 - 2490 | 0.165 OMR | 1.650 OMR |
| 2500+ | 0.160 OMR | 1.595 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details

