P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

RS Stock No.: 812-3139PBrand: VishayManufacturers Part No.: SI2365EDS-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

67.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

23.8 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1.02mm

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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0.130 OMR

Each (Supplied on a Reel) (ex VAT)

0.136 OMR

Each (Supplied on a Reel) (inc VAT)

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
Select packaging type

0.130 OMR

Each (Supplied on a Reel) (ex VAT)

0.136 OMR

Each (Supplied on a Reel) (inc VAT)

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
50 - 4500.130 OMR6.500 OMR
500 - 12000.090 OMR4.500 OMR
1250 - 24500.070 OMR3.500 OMR
2500 - 49500.065 OMR3.250 OMR
5000+0.055 OMR2.750 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

67.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

23.8 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1.02mm

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more