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Vishay Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 SI2392BDS-T1-GE3

RS Stock No.: 279-9893Brand: VishayManufacturers Part No.: SI2392BDS-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

4.620 OMR

0.231 OMR Each (In a Pack of 20) (ex VAT)

4.851 OMR

0.243 OMR Each (In a Pack of 20) (inc. VAT)

Vishay Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 SI2392BDS-T1-GE3
Select packaging type

4.620 OMR

0.231 OMR Each (In a Pack of 20) (ex VAT)

4.851 OMR

0.243 OMR Each (In a Pack of 20) (inc. VAT)

Vishay Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 SI2392BDS-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 200.231 OMR4.620 OMR
40 - 800.205 OMR4.095 OMR
100 - 2800.184 OMR3.675 OMR
300 - 9800.178 OMR3.570 OMR
1000+0.173 OMR3.465 OMR

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more