Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
3.410 OMR
0.341 OMR Each (In a Pack of 10) (ex VAT)
3.580 OMR
0.358 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
3.410 OMR
0.341 OMR Each (In a Pack of 10) (ex VAT)
3.580 OMR
0.358 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.341 OMR | 3.410 OMR |
| 100 - 240 | 0.324 OMR | 3.245 OMR |
| 250 - 490 | 0.292 OMR | 2.915 OMR |
| 500 - 990 | 0.275 OMR | 2.750 OMR |
| 1000+ | 0.264 OMR | 2.640 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products