N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3

RS Stock No.: 134-9715Brand: VishayManufacturers Part No.: SI5448DU-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.47 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

26.2 nC @ 10 V

Height

0.8mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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0.230 OMR

Each (In a Pack of 10) (ex VAT)

0.242 OMR

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
Select packaging type

0.230 OMR

Each (In a Pack of 10) (ex VAT)

0.242 OMR

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 400.230 OMR2.300 OMR
50 - 1400.225 OMR2.250 OMR
150 - 7400.190 OMR1.900 OMR
750 - 14900.165 OMR1.650 OMR
1500+0.140 OMR1.400 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.47 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

26.2 nC @ 10 V

Height

0.8mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more