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N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3

RS Stock No.: 145-1656Brand: VishayManufacturers Part No.: SIHD3N50D-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

17.000 OMR

0.340 OMR Each (In a Tube of 50) (ex VAT)

17.850 OMR

0.357 OMR Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3

17.000 OMR

0.340 OMR Each (In a Tube of 50) (ex VAT)

17.850 OMR

0.357 OMR Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 500.340 OMR17.000 OMR
100 - 2000.260 OMR13.000 OMR
250+0.245 OMR12.250 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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You may be interested in

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in