Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
18.150 OMR
0.363 OMR Each (In a Tube of 50) (ex VAT)
19.058 OMR
0.381 OMR Each (In a Tube of 50) (inc. VAT)
50
18.150 OMR
0.363 OMR Each (In a Tube of 50) (ex VAT)
19.058 OMR
0.381 OMR Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 0.363 OMR | 18.150 OMR |
| 100 - 200 | 0.275 OMR | 13.750 OMR |
| 250+ | 0.258 OMR | 12.925 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details


