Vishay EF N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3

RS Stock No.: 200-6795Brand: VishayManufacturers Part No.: SiHP105N60EF-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.088 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

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Stock information temporarily unavailable.

11.330 OMR

2.266 OMR Each (In a Pack of 5) (ex VAT)

11.896 OMR

2.379 OMR Each (In a Pack of 5) (inc. VAT)

Vishay EF N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3

11.330 OMR

2.266 OMR Each (In a Pack of 5) (ex VAT)

11.896 OMR

2.379 OMR Each (In a Pack of 5) (inc. VAT)

Vishay EF N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 202.266 OMR11.330 OMR
25 - 452.040 OMR10.202 OMR
50 - 1201.930 OMR9.652 OMR
125 - 2451.815 OMR9.075 OMR
250+1.716 OMR8.580 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.088 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more