Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.610 OMR
0.561 OMR Each (In a Pack of 10) (ex VAT)
5.890 OMR
0.589 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
5.610 OMR
0.561 OMR Each (In a Pack of 10) (ex VAT)
5.890 OMR
0.589 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.561 OMR | 5.610 OMR |
| 100 - 240 | 0.528 OMR | 5.280 OMR |
| 250 - 490 | 0.478 OMR | 4.785 OMR |
| 500 - 990 | 0.451 OMR | 4.510 OMR |
| 1000+ | 0.424 OMR | 4.235 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


