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Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-07L-E3

RS Stock No.: 710-5060Brand: VishayManufacturers Part No.: SUM110P06-07L-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

230 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

9.652 OMR

1.930 OMR Each (In a Pack of 5) (ex VAT)

10.135 OMR

2.027 OMR Each (In a Pack of 5) (inc. VAT)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-07L-E3
Select packaging type

9.652 OMR

1.930 OMR Each (In a Pack of 5) (ex VAT)

10.135 OMR

2.027 OMR Each (In a Pack of 5) (inc. VAT)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-07L-E3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 201.930 OMR9.652 OMR
25 - 451.644 OMR8.222 OMR
50 - 1201.546 OMR7.728 OMR
125 - 2451.446 OMR7.232 OMR
250+1.364 OMR6.820 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

230 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more