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P-Channel MOSFET Transistor, 110 A, 60 V, 3-Pin D2PAK Vishay SUM110P06-08L-E3

RS Stock No.: 919-5740Brand: VishayManufacturers Part No.: SUM110P06-08L-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

9.65mm

Maximum Operating Temperature

+175 °C

Length

10.41mm

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

Taiwan, Province Of China

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Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
1.079 OMREach (On a Reel of 800) (ex VAT)
Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 800) (ex VAT)

P-Channel MOSFET Transistor, 110 A, 60 V, 3-Pin D2PAK Vishay SUM110P06-08L-E3

P.O.A.

Each (On a Reel of 800) (ex VAT)

P-Channel MOSFET Transistor, 110 A, 60 V, 3-Pin D2PAK Vishay SUM110P06-08L-E3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
1.079 OMREach (On a Reel of 800) (ex VAT)

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

9.65mm

Maximum Operating Temperature

+175 °C

Length

10.41mm

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
1.079 OMREach (On a Reel of 800) (ex VAT)