SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
49.2 nC @ 20 V
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Height
21.1mm
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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12.035 OMR
Each (ex VAT)
12.637 OMR
Each (inc VAT)
1
12.035 OMR
Each (ex VAT)
12.637 OMR
Each (inc VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 5 | 12.035 OMR |
| 6 - 14 | 11.255 OMR |
| 15+ | 10.980 OMR |
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
49.2 nC @ 20 V
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Height
21.1mm
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products