SiC N-Channel MOSFET, 42 A, 1200 V, 3-Pin TO-247 Wolfspeed CMF20120D

RS Stock No.: 904-7342Brand: WolfspeedManufacturers Part No.: CMF20120D
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.8V

Minimum Gate Threshold Voltage

3.2V

Maximum Power Dissipation

215 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+135 °C

Length

16.13mm

Typical Gate Charge @ Vgs

90.8 nC @ 0/20 V

Width

5.21mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.5V

Height

21.1mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

SiC N-Channel MOSFET, 42 A, 1200 V, 3-Pin TO-247 Wolfspeed CMF20120D

P.O.A.

SiC N-Channel MOSFET, 42 A, 1200 V, 3-Pin TO-247 Wolfspeed CMF20120D
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.8V

Minimum Gate Threshold Voltage

3.2V

Maximum Power Dissipation

215 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+135 °C

Length

16.13mm

Typical Gate Charge @ Vgs

90.8 nC @ 0/20 V

Width

5.21mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.5V

Height

21.1mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more