Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray Infineon FF2600UXTR33T2M1BPSA1
Technical Document
Specifications
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
720 A
Maximum Drain Source Voltage
3300 V
Package Type
Tray
Series
XHP
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Country of Origin
Germany
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2,846.445 OMR
2,846.445 OMR Each (ex VAT)
2,988.767 OMR
2,988.767 OMR Each (inc. VAT)
1
2,846.445 OMR
2,846.445 OMR Each (ex VAT)
2,988.767 OMR
2,988.767 OMR Each (inc. VAT)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
720 A
Maximum Drain Source Voltage
3300 V
Package Type
Tray
Series
XHP
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Country of Origin
Germany
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products