Technical Document
Specifications
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Automotive Standard
AEC-Q100
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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2.245 OMR
Each (In a Pack of 2) (ex VAT)
2.357 OMR
Each (In a Pack of 2) (inc VAT)
2
2.245 OMR
Each (In a Pack of 2) (ex VAT)
2.357 OMR
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | 2.245 OMR | 4.490 OMR |
10 - 48 | 1.725 OMR | 3.450 OMR |
50 - 98 | 1.675 OMR | 3.350 OMR |
100 - 498 | 1.540 OMR | 3.080 OMR |
500+ | 1.500 OMR | 3.000 OMR |
Technical Document
Specifications
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Automotive Standard
AEC-Q100
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.