Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
770 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.65mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.9mm
Number of Elements per Chip
1
Height
16.15mm
Series
CoolMOS P6
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Country of Origin
China
Product details
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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0.920 OMR
Each (In a Pack of 5) (ex VAT)
0.966 OMR
Each (In a Pack of 5) (inc VAT)
5
0.920 OMR
Each (In a Pack of 5) (ex VAT)
0.966 OMR
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.920 OMR | 4.600 OMR |
25 - 45 | 0.890 OMR | 4.450 OMR |
50 - 120 | 0.825 OMR | 4.125 OMR |
125 - 245 | 0.760 OMR | 3.800 OMR |
250+ | 0.740 OMR | 3.700 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
770 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.65mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.9mm
Number of Elements per Chip
1
Height
16.15mm
Series
CoolMOS P6
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Country of Origin
China
Product details
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.