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Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1

RS Stock No.: 262-5867Brand: InfineonManufacturers Part No.: IPD038N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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0.345 OMR

Each (In a Pack of 10) (ex VAT)

0.362 OMR

Each (In a Pack of 10) (inc. VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Select packaging type

0.345 OMR

Each (In a Pack of 10) (ex VAT)

0.362 OMR

Each (In a Pack of 10) (inc. VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 900.345 OMR3.450 OMR
100 - 2400.330 OMR3.300 OMR
250 - 4900.320 OMR3.200 OMR
500 - 9900.310 OMR3.100 OMR
1000+0.200 OMR2.000 OMR

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more