Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

RS Stock No.: 284-792Brand: InfineonManufacturers Part No.: ISZ15EP15LMATMA1
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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Stock information temporarily unavailable.

6.600 OMR

0.330 OMR Each (In a Pack of 20) (ex VAT)

6.930 OMR

0.346 OMR Each (In a Pack of 20) (inc. VAT)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Select packaging type

6.600 OMR

0.330 OMR Each (In a Pack of 20) (ex VAT)

6.930 OMR

0.346 OMR Each (In a Pack of 20) (inc. VAT)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
20 - 1800.330 OMR6.600 OMR
200 - 4800.319 OMR6.380 OMR
500 - 9800.308 OMR6.160 OMR
1000 - 19800.292 OMR5.830 OMR
2000+0.286 OMR5.720 OMR

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more