Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
850 V
Series
HiperFET
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.25 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Height
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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9.670 OMR
Each (In a Tube of 30) (ex VAT)
10.154 OMR
Each (In a Tube of 30) (inc. VAT)
30
9.670 OMR
Each (In a Tube of 30) (ex VAT)
10.154 OMR
Each (In a Tube of 30) (inc. VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | 9.670 OMR | 290.100 OMR |
120 - 270 | 8.670 OMR | 260.100 OMR |
300 - 570 | 8.380 OMR | 251.400 OMR |
600 - 870 | 8.200 OMR | 246.000 OMR |
900+ | 8.105 OMR | 243.150 OMR |
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
850 V
Series
HiperFET
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.25 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Height
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V