Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1300 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
500 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
Please check again later.
2.910 OMR
Each (Supplied in a Tube) (ex VAT)
3.056 OMR
Each (Supplied in a Tube) (inc VAT)
2
2.910 OMR
Each (Supplied in a Tube) (ex VAT)
3.056 OMR
Each (Supplied in a Tube) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
2 - 8 | 2.910 OMR | 5.820 OMR |
10 - 98 | 2.470 OMR | 4.940 OMR |
100 - 248 | 1.980 OMR | 3.960 OMR |
250 - 498 | 1.860 OMR | 3.720 OMR |
500+ | 1.775 OMR | 3.550 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1300 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
500 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.