Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 15.9 x 5.3mm
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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5.245 OMR
Each (ex VAT)
5.507 OMR
Each (inc VAT)
1
5.245 OMR
Each (ex VAT)
5.507 OMR
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | 5.245 OMR |
5 - 9 | 4.980 OMR |
10 - 24 | 4.485 OMR |
25 - 49 | 4.030 OMR |
50+ | 3.935 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 15.9 x 5.3mm
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.