Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
STripFET V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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25.075 OMR
5.015 OMR Each (In a Pack of 5) (ex VAT)
26.329 OMR
5.266 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
25.075 OMR
5.015 OMR Each (In a Pack of 5) (ex VAT)
26.329 OMR
5.266 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 5.015 OMR | 25.075 OMR |
25 - 45 | 4.990 OMR | 24.950 OMR |
50 - 120 | 4.940 OMR | 24.700 OMR |
125 - 245 | 4.895 OMR | 24.475 OMR |
250+ | 4.875 OMR | 24.375 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
STripFET V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.