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N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF

RS Stock No.: 178-0845Brand: VishayManufacturers Part No.: IRFBG20PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

25.500 OMR

0.510 OMR Each (In a Tube of 50) (ex VAT)

26.775 OMR

0.536 OMR Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF

25.500 OMR

0.510 OMR Each (In a Tube of 50) (ex VAT)

26.775 OMR

0.536 OMR Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 500.510 OMR25.500 OMR
100 - 2000.435 OMR21.750 OMR
250+0.410 OMR20.500 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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You may be interested in

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in