Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.12mm
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
0.225 OMR
Each (In a Tube of 50) (ex VAT)
0.236 OMR
Each (In a Tube of 50) (inc VAT)
50
0.225 OMR
Each (In a Tube of 50) (ex VAT)
0.236 OMR
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 450 | 0.225 OMR | 11.250 OMR |
500 - 1200 | 0.215 OMR | 10.750 OMR |
1250 - 2450 | 0.195 OMR | 9.750 OMR |
2500 - 4950 | 0.190 OMR | 9.500 OMR |
5000+ | 0.180 OMR | 9.000 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.12mm
Country of Origin
China
Product details