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N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay IRFR110PBF

RS Stock No.: 540-9581Brand: VishayManufacturers Part No.: IRFR110PBFDistrelec Article No.: 30191598
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (ex VAT)
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (ex VAT)

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0.140 OMR

Each (ex VAT)

0.147 OMR

Each (inc. VAT)

N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay IRFR110PBF
Select packaging type

0.140 OMR

Each (ex VAT)

0.147 OMR

Each (inc. VAT)

N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay IRFR110PBF
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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You may be interested in
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (ex VAT)
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (ex VAT)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (ex VAT)
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (ex VAT)