Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3

RS Stock No.: 180-7304Brand: VishayManufacturers Part No.: SI5515CDC-T1-GE3IMPA: 0
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Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N, P

Pin Count

8

Maximum Gate Threshold Voltage

0.8V

Mounting Type

Surface Mount

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Maximum Continuous Drain Current

4 A

Noise Level

52dB(A)

Package Type

1206 ChipFET

Brand

Vishay

Country of Origin

China

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0.155 OMR

Each (On a Reel of 3000) (ex VAT)

0.163 OMR

Each (On a Reel of 3000) (inc VAT)

Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3

0.155 OMR

Each (On a Reel of 3000) (ex VAT)

0.163 OMR

Each (On a Reel of 3000) (inc VAT)

Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N, P

Pin Count

8

Maximum Gate Threshold Voltage

0.8V

Mounting Type

Surface Mount

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Maximum Continuous Drain Current

4 A

Noise Level

52dB(A)

Package Type

1206 ChipFET

Brand

Vishay

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more