Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
2
Channel Type
N, P
Pin Count
8
Maximum Gate Threshold Voltage
0.8V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
20 V
Series
TrenchFET
Maximum Continuous Drain Current
4 A
Noise Level
52dB(A)
Package Type
1206 ChipFET
Brand
VishayCountry of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
0.155 OMR
Each (On a Reel of 3000) (ex VAT)
0.163 OMR
Each (On a Reel of 3000) (inc VAT)
3000
0.155 OMR
Each (On a Reel of 3000) (ex VAT)
0.163 OMR
Each (On a Reel of 3000) (inc VAT)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
2
Channel Type
N, P
Pin Count
8
Maximum Gate Threshold Voltage
0.8V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
20 V
Series
TrenchFET
Maximum Continuous Drain Current
4 A
Noise Level
52dB(A)
Package Type
1206 ChipFET
Brand
VishayCountry of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products