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N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3

RS Stock No.: 710-3402Brand: VishayManufacturers Part No.: SIR462DP-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

Country of Origin

China

Product details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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0.400 OMR

Each (In a Pack of 5) (ex VAT)

0.420 OMR

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Select packaging type

0.400 OMR

Each (In a Pack of 5) (ex VAT)

0.420 OMR

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 450.400 OMR2.000 OMR
50 - 2450.380 OMR1.900 OMR
250 - 4950.280 OMR1.400 OMR
500 - 12450.260 OMR1.300 OMR
1250+0.235 OMR1.175 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

Country of Origin

China

Product details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more