Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
4.9mm
Width
5.89mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
0.400 OMR
Each (In a Pack of 5) (ex VAT)
0.420 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
0.400 OMR
Each (In a Pack of 5) (ex VAT)
0.420 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.400 OMR | 2.000 OMR |
50 - 245 | 0.380 OMR | 1.900 OMR |
250 - 495 | 0.280 OMR | 1.400 OMR |
500 - 1245 | 0.260 OMR | 1.300 OMR |
1250+ | 0.235 OMR | 1.175 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
4.9mm
Width
5.89mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Country of Origin
China
Product details