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N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3

RS Stock No.: 134-9698Brand: VishayManufacturers Part No.: SIRA90DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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0.660 OMR

Each (In a Pack of 5) (ex VAT)

0.693 OMR

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3
Select packaging type

0.660 OMR

Each (In a Pack of 5) (ex VAT)

0.693 OMR

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 450.660 OMR3.300 OMR
50 - 1200.560 OMR2.800 OMR
125 - 2450.530 OMR2.650 OMR
250 - 4950.495 OMR2.475 OMR
500+0.470 OMR2.350 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more