Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
5.748 OMR
1.150 OMR Each (In a Pack of 5) (ex VAT)
6.035 OMR
1.207 OMR Each (In a Pack of 5) (inc. VAT)
5
5.748 OMR
1.150 OMR Each (In a Pack of 5) (ex VAT)
6.035 OMR
1.207 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 1.150 OMR | 5.748 OMR |
25 - 45 | 0.869 OMR | 4.345 OMR |
50 - 95 | 0.825 OMR | 4.125 OMR |
100 - 245 | 0.820 OMR | 4.098 OMR |
250+ | 0.814 OMR | 4.070 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details